Transistor 50n06 datasheet pdf

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The utc 50n06 is threeterminal silicon device with current conduction capability of about 50a, fast switching speed. A2, march 2003qfettmfqp50n0660v nchannel mosfetgeneral descriptionthese nchannel enhancement mode power field effecttransistors are produced using fairchilds proprietary,planar stripe, dmos technology. Fqp50n06 datasheet, fqp50n06 pdf, fqp50n06 data sheet, fqp50n06 manual, fqp50n06 pdf, fqp50n06, datenblatt, electronics fqp50n06, alldatasheet, free, datasheet. J absolute maximum ratings parameter symbol ratings unit drainsource voltage vdss 60 v gatesource voltage vgss 20 v continuous drain current id 50 a pulsed drain current note 2 idm 150 a avalanche energy single pulsed note 3 eas 205 mj.

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